Interdiffusion at the heterojunctions which were formed by the epitaxial deposition of Ge films onto GaAs was studied at 650 to 800C. It was found that the diffusivity of Ge in Cr- or Si-doped GaAs could be described by:

D (cm2/s) = 1.6 x 10-5 exp[-2.06(eV)/kT]

K.Sarma, R.Dalby, K.Rose, O.Aina, W.Katz, N.Lewis: Journal of Applied Physics, 1984, 56[10], 2703-7