The depth profiles of 60 and 100keV protons which were implanted to fluences of 1016 or 1017/cm2 at room temperature were determined by using ion beam techniques. The H profiles were measured as a function of annealing temperatures of up to 820K. It was found that the redistribution of implanted H depended upon the migration of implantation-induced defects. The migration of H-defect complexes was described by the expression:

D(cm2/s) = 2 x 105 exp[-2.16(eV)/kT]

J.Räisänen, J.Keinonen, V.Karttunen, I.Koponen: Journal of Applied Physics, 1988, 64[5], 2334-6