The electron beam-induced current contrast of a surface-perpendicular dislocation was calculated by using a Monte Carlo algorithm. The dislocation was treated as a cylinder with a given radius. The minority carrier lifetime within the cylinder was assumed to be smaller than that outside. The dependence of the maximum contrast upon the primary beam energy, the carrier lifetimes and the dislocation radius was investigated.

Monte Carlo Simulation of the Recombination Contrast of Dislocations. N.Tabet: Solid State Phenomena, 1998, 63-64, 89-96