The diffusive behavior of 35S was studied at 940 to 1200C. The results could be described by
D (cm2/s) = 1.85 x 10-2 exp[-2.6(eV)/kT]
A.B.Y.Young, G.L.Pearson: Journal of the Physics and Chemistry of Solids, 1970, 31[3], 517-27
Table 22
Diffusion Parameters for Implanted S in GaAs
Dose (/cm2) | Do (cm2/s) | E (eV) |
1 x 1015 | 2.0 x 10-9 | 0.8 |
5 x 1014 | 9.0 x 10-9 | 1.0 |
1 x 1014 | 4.2 x 10-7 | 1.5 |
5 x 1013 | 5.5 x 10-7 | 1.6 |