The diffusive behavior of S was studied. The results depended upon the GaS:As ratio and could be described by:

GaS/As = 10 (810-910C):     D (cm2/s) = 3.78 x 106 exp[-4.35(eV)/kT]

GaS/As = 2 (750-910C):     D (cm2/s) = 1.09 x 101 exp[-2.95(eV)/kT]

H.Matino: Solid-State Electronics, 1974, 17[1], 35-9