The migration of atomic Si in δ-doped material was studied by means of capacitance-voltage measurements and rapid thermal annealing. It was shown that these methods could detect diffusion which occurred at a length scale as small as 1nm. The capacitance-voltage profile widths broadened from less than 4nm, to 13.7nm, upon annealing (1000C, 5s). It was found that the results could be described by:

D(cm2/s) = 0.0004 exp[-2.45(eV)/kT]

E.F.Schubert, T.H.Chiu, J.E.Cunningham, B.Tell, J.B.Stark: Journal of Electronic Materials, 1988, 17[6], 527-31