A new procedure for studying the diffraction intensity distribution from real monocrystals was proposed for the case of nearly parallel dislocations. The procedure was based upon the Fourier transformation algorithm, by means of which the diffraction intensity could be estimated by studying the local dislocation arrangement. By cutting and etching a specific crystallographic plane, which was nearly parallel to the diffraction plane to be studied, the arrangements of linear dislocations could be simplified into point fields. The displacement field in the direction of the diffraction vector could then be estimated. The diffraction behavior which was produced by the displacement field was obtained by calculating a cross-correlation function. The results which were deduced by using this procedure were in good agreement with experimental data.

Correlation between Dislocation Configuration and Scattering Behavior of Hexagonal Close-Packed Single Crystals. Y.Hao, F.Mucklich, G.Petzow: Computational Materials Science, 1996, 7[1-2], 167-72