The diffusion of impurity atoms, their location in the host lattice and the formation and migration of vacancies were studied using ion beam techniques and positron spectroscopy. A novel procedure was developed for the determination of depth profiles, using Rutherford back-scattering spectrometry, from samples with rough surfaces. It was found that Si diffused via a combined interstitial and vacancy mechanism. The activation energy for interstitial diffusion was 1.72eV, and that for the vacancy mechanism was 2.2 to 2.8eV; depending upon the vacancy involved.

Diffusion of Impurities and Vacancies in Compound Semiconductors J.Slotte: Acta Polytechnica Scandinavica, Applied Physics Series, 1999, 222, 2-44