The migration of implanted Sn was studied by means of secondary ion mass spectrometry. It was concluded that the diffusivity of the Sn depended upon the electron concentration, and that the Sn diffused via negatively charged Ga vacancies. The diffusivity of Sn outside of the implanted region was independent of the dose, and was associated with an activation energy of 1.98eV.

E.L.Allen, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1990, 67[7], 3311-4