The diffusive behavior of Sn was studied at 800 to 1000C. The results could be described by:

D (cm2/s) = 1.0 x 10-5 exp[-2.0(eV)/kT]

Tin Diffusion into GaAs from SiO2 Films. H.Yamazaki, Y.Kawasaki, M.Fujimoto, K.Kudo: Japanese Journal of Applied Physics, 1975, 14[5], 717-8