The diffusive behavior of Te was studied at 1000 to 1150C. The results could be described by:

D (cm2/s) = 1.5 x 10-1 exp[-3.5(eV)/kT]

T.A.Karelina, T.T.Lavrishchev, G.L.Prokhodko, S.S.Khludkov: Izvestiya Akademii Nauk SSSR – Neorganicheskie Materialy, 1974, 10[2], 228-30

Figure 21

Diffusivity of V in GaAs