The diffusion of V was studied in V-doped GaAs layers grown by metalorganic chemical vapour deposition using secondary ion mass spectroscopy. The V concentration profiles of sandwiched structures, made up of alternately undoped and V-doped GaAs layers had shown a concentration independent diffusion coefficient, DV, for V doping levels of 1018 to 1019/cm3. Measurements of DV at 550, 615 and 680C (figure 21) indicated that the temperature dependence of DV could be described by:

D (cm2/s) = 2.4 x 10-6 exp[-1.51(eV)/kT]

It was suggested that the V diffused via interstitial sites.

Diffusion of Vanadium in GaAs. A.Bchetnia, M.Souissi, A.Rebey, B.El Jani: Journal of Crystal Growth, 2004, 270[3-4], 376-9

 

Table 26

Diffusivity of Zn in GaAs as a Function of Diffusion-Source Composition

 

Temperature (C)

As

Zn

Ga

D (cm2/s)

700

0.054

0.698

0.248

1.08 x 10-19

900

0.547

0.414

0.039

2.52 x 10-16

900

0.535

0.429

0.036

1.88 x 10-16

900

0.246

0.508

0.246

1.20 x 10-15

900

0.075

0.130

0.795

1.66 x 10-15

1050

0.542

0.323

0.135

2.24 x 10-14

1050

0.474

0.366

0.160

2.94 x 10-14

1050

0.330

0.333

0.337

5.26 x 10-14