The migration of Zn in AlGaAs at 650C was studied by using the sealed-ampoule method and a ZnAs2 source. It was found that the results for zero Al content (table 27) could be described by the expression:
D (cm2/s) = 26 exp[-2.47(eV)/kT]
V.Quintana, J.J.Clemencon, A.K.Chin: Journal of Applied Physics, 1988, 63[7], 2454-5
Table 28
Diffusivity of Zn in GaAs
Temperature (C) | D (cm2/s) |
700 | 3.33 x 10-12 |
650 | 7.12 x 10-13 |
600 | 1.72 x 10-13 |
575 | 5.43 x 10-14 |