The diffusion of implanted Zn was studied, at annealing temperatures of between 625 and 850C, by means of secondary ion mass spectrometry. A substitutional-interstitial diffusion mechanism was proposed in order to explain how deviations of the local Ga interstitial concentration, from its equilibrium value, regulated Zn diffusion. It was found that it was possible to simulate both box-shaped profiles, that resulted from high-temperature annealing, and kink-and-tail profiles which resulted from lower-temperature annealing. The simulation data permitted the determination of Arrhenius relationships for the intrinsic diffusion coefficient of implanted Zn. This (table 30) could be described by:

D (cm2/s) = 0.6075 exp[-3.21(eV)/kT]

M.P.Chase, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1997, 81[4], 1670-6

Table 30

Diffusivity of Zn in GaAs