The diffusion of Cd in In0.53Ga0.47As at 600C was studied by using a closed-ampoule technique, secondary ion mass spectrometry, and Hall effect measurements. It was found that the diffusivity could be described by an activation energy of 2.6eV. In some cases, a slower second diffusion front was found as well as a first steep junction.

P.Ambreé, B.Gruska: Crystal Research and Technology, 1989, 24[3], 299-305