The diffusion length of H in C-doped material was estimated from resistance variations which occurred in samples with n-type cap layers during annealing in an N2 ambient. It was found that the resultant diffusion lengths were proportional to the square root of the annealing time; as in a normal diffusion process. The activation energy for H diffusion was estimated to be 1.2eV (table 31). The effective diffusion coefficients were smaller than those in GaAs, thus implying that group-III atoms strongly affected H diffusion in C-doped compound semiconductors.

H.Ito: Japanese Journal of Applied Physics, 1996, 35[2-9B], L1155-7

Table 31

Diffusivity of H in InGaAs