The behavior of implanted Si+ ions was investigated during rapid thermal annealing at temperatures of between 600 and 900C. The apparent activation energy for Si was equal to 0.64eV. Higher activation efficiencies were found for the dopant in InGaAs, as compared with InAlAs. The Si underwent no migration, even after annealing at 850C.

E.Hailemariam, S.J.Pearton, W.S.Hobson, H.S.Luftman, A.P.Perley: Journal of Applied Physics, 1992, 71[1], 215-20