The diffusion of Zn was studied, using photoluminescence techniques, in liquid-phase epitaxial In0.5Ga0.5P layers which had been grown onto semi-insulating GaAs substrates. The photoluminescence exhibited a characteristic emission peak at 1.934eV after diffusion. It was found that this peak behaved like donor-acceptor pair recombination and was associated with the interstitial Zn donor to substitutional Zn acceptor band transition. The calculated activation energy of the substitutional acceptor was 0.047eV.

I.T.Yoon, B.S.Jeong, H.L.Park: Thin Solid Films, 1997, 300[1-2], 284-8