The dependence, upon an external electric field, of the filling factor for the occupation of the energy levels of an edge dislocation by electrons was investigated theoretically. An analytical relationship was derived for the filling factor. It was established that the dislocation filling factor decreased as the electric field was increased.

Filling of Dislocation Levels in Strong Electric Fields. Z.A.Veliev: Fizika I Tekhnika Poluprovodnikov, 1998, 32[1], 36-7 (Semiconductors, 1998, 32[1], 29-30)