Radiotracer techniques were used to show that 198Au migrates in GaP as positive ions. The results for single crystals could be described by:

D (cm2/s) = 8 x 100 exp[-2.5(eV)/kT]

and

D (cm2/s) = 2.0 x 101 exp[-2.4(eV)/kT]

for Ga and P surface treatments, respectively. The concentration profiles depended upon the polarity of the {111} face of the GaP crystal.

T.D.Dzhafarov, A.A.Litvin, S.V.Khudyakov: Fizika Tverdogo Tela, 1978, 20[1], 267-9