The in-diffusion of As from an epitaxial n-type GaAs layer was studied at 700 to 900C. The results could be described by:

D (cm2/s) = 1.03 x 101 exp[-57.4(kcal/mol)/RT]


Au diffusion Ge B diffusion

 

 

Diffusion of Arsenic near the Interface of GaAs-Ge Epitaxy. I.Nobuyuki: Japanese Journal of Applied Physics, 1968, 7[1], 81

 

Table 34

Diffusivity of Sb in Ge

 

Temperature (C)

Donor Concentration (/cm3)

D (cm2/s)

600

2.4 x 1018

2.9 x 10-14

650

5.1 x 1018

2.3 x 10-13

700

5.9 x 1018

1.0 x 10-12

700

6.2 x 1018

9.8 x 10-13

700

5.0 x 1018

9.2 x 10-13

750

7.5 x 1018

3.5 x 10-12

825

9.8 x 1018

3.0 x 10-11

900

6.3 x 1018

1.7 x 10-10

905

1.4 x 1018

2.1 x 10-10

920

1.9 x 1018

2.9 x 10-10