Resonance broadening and tracer methods were used to study the diffusion of 30Si at 650 to 900C. The results could be described by:

D (cm2/s) = 2.4 x 10-1 exp[-2.9(eV)/kT]

J.Räisänen, J.Hirvonen, A.Anttila: Solid State Electronics, 1981, 24[4], 333-6