Serial sectioning was used to study the diffusion of 123Sn in monocrystalline material with a carrier concentration of about 1018/cm3. It was found that the concentration profiles were consistent with the existence of 2 diffusion coefficients (table 39): one which applied near to the surface,

200-300C:     D (cm2/s) = 1.73 x 10-6 exp[-0.66(eV)/kT]

while the other applied deep within the specimen,

200-300C:     D (cm2/s) = 1.8 x 10-3 exp[-0.80(eV)/kT]

Electromigration (180C, 0.14V/cm) was also studied, and the charge number of the diffusing 123Sn ion was found to be 1.02.

Diffusion of Sn in HgTe. F.A.Zaitov: Fizika Tverdogo Tela, 1971, 13[1], 278-9

Table 39

Diffusion of 123Sn in HgTe