It was found that the temperature dependence of the diffusion coefficient could be described by:

D (cm2/s) = 6.3 x 10-5 exp[-1.4(eV)/kT]

giving D = 1.07 x 10−11cm2/s at 768C. The results of measurements of the luminescence and electrical properties showed that Be was a shallow acceptor with an activation energy of 0.03meV.

Beryllium Diffusion and Influence on the Luminescent and Electrical Properties of Indium Phosphide. V.V.Agaev, I.N.Arsentev, S.G.Metreveli, S.P.Staroseltseva, G.I.Yablochkina: Technical Physics Letters, 2006, 32[8], 709-11