The Zn was diffused into an unpassivated surface, from an open gas flow system, at temperatures of between 733 and 773K. In the region where the carrier concentration profile could be described by an erfc function, the diffusivity was given by:

D(m2/s) = 3 x 10-7 exp[-120(kJ/mol)/RT]

It was shown that thermal processes caused changes in the charge state of Zn in InP. These resulted in a variation of the carrier profile.

T.O.Budko, E.V.Gushchinskaya, J.S.Emelyanenko, S.A.Malyshev: Physica Status Solidi A, 1989, 111[2], 451-6