The results of open-tube Zn diffusion into undoped or S-doped n-type material at temperatures ranging from 550 to 675C were presented. The results were consistent with interstitial-substitutional diffusion. In the case of undoped samples, the results were described by:

D (cm2/s) = 0.049 exp[-1.52(eV)/kT]

In the case of heavily S-doped samples, the results were described by:

D (cm2/s) = 1400 exp[-2.34(eV)/kT]

The difference in the activation energies was comparable to the Fermi level difference for the two substrate types, and was consistent with the differing diffusion mechanisms which occurred in these two types of InP.

H.S.Marek, H.B.Serreze: Applied Physics Letters, 1987, 51[24], 2031-3