Initially p-type Cd-doped specimens, with a dislocation density of less than 100/cm2, were studied. The diffusivity at 230 to 490C was determined using layer-by-layer etching and resistivity measurements at liquid nitrogen temperatures. It was found that the data could be described by:

D(cm2/s) = 2.2 x 101 [-1.0(eV)/kT]

V.S.Ivleva, V.I.Selyanina: Fizika i Technika Poluprovodnikov, 1979, 13[11], 2288-90

Table 40

Diffusivity of 114mIn in InSb