Self-diffusion in Bridgman-type single crystals was studied, at temperatures ranging from 400 to 500C, by using 114mIn radiotracers. An anodic oxidation technique was used for serial sectioning, and the penetration profiles were fitted to an erf solution of the diffusion equations. It was found that the self-diffusion of In (table 40) could be described by:
D(cm2/s) = 6.0 x 10-7 [-1.45(eV)/kT]
The migration enthalpy of In atoms was estimated to be equal to 0.66eV, and the corresponding formation enthalpy for an In vacancy was 0.79eV.
A.Rastogi, K.V.Reddy: Journal of Applied Physics, 1994, 75[10], 4984-9
Table 41
Grain Boundary Diffusivity of In in InSb
Temperature (C) | D (cm2/s) |
218 | 2.67 x 10-15 |
248 | 7.89 x 10-15 |
282 | 2.42 x 10-14 |
302 | 4.91 x 10-14 |
353 | 1.78 x 10-13 |
390 | 4.53 x 10-13 |
413 | 7.75 x 10-13 |