The self-diffusion of In was studied (table 41) in polycrystalline films by using neutron activation tracer scanning methods. The grain boundary diffusion parameters were evaluated at temperatures ranging from 200 to 400C. The data could be described by:

D (cm2/s) = 1.17 x 10-6 exp[-0.84(eV)/kT]

The In diffused via grain boundaries within the temperature range which was studied. The grain boundary energy and its temperature dependence was also deduced.

A.Rastogi, K.V.Reddy: Semiconductor Science and Technology, 1994, 9[11], 2067-72

Table 42

Diffusivity of 125Sb in InSb