Self-diffusion in Bridgman-type single crystals was studied, at temperatures ranging from 400 to 500C, by using 125Sb radiotracers. An anodic oxidation technique was used for serial sectioning, and the penetration profiles were fitted to an erf solution of the diffusion equations. It was found that the self-diffusion of Sb (table 42) could be described by:

D(cm2/s) = 5.35 x 10-4 [-1.91(eV)/kT]

The migration enthalpy of Sb atoms was estimated to be equal to 0.70eV, and the corresponding formation enthalpy for an Sb vacancy was 1.21eV.

A.Rastogi, K.V.Reddy: Journal of Applied Physics, 1994, 75[10], 4984-9