The self-diffusion of Sb was studied (table 43) in polycrystalline films by using neutron activation tracer scanning methods. The grain boundary diffusion parameters were evaluated at temperatures ranging from 200 to 400C. The data could be described by:

D (cm2/s) = 1.32 x 10-4 exp[-1.11(eV)/kT]

The Sb diffused via grain boundaries within the temperature range which was studied. The grain boundary energy and its temperature dependence was also deduced.

A.Rastogi, K.V.Reddy: Semiconductor Science and Technology, 1994, 9[11], 2067-72

Table 43

Grain Boundary Diffusivity of Sb in InSb