The InSb substrates consisted of undoped n-type material having a (100) orientation. Elemental Zn, or a combination of elemental Zn and Sb, was used as the diffusion source and annealing was carried out at 355 to 455C. The results depended upon the mole ratio of Sb to Zn in the source. When the ratio was less than 5, an irregular diffusion front and considerable associated damage were observed. When the ratio was less than 0.5 or greater than 5, the activation energies were 2.8 and 1.5eV, respectively.

K.Nishitani, K.Nagahama, T.Murotani: Japanese Journal of Applied Physics, 1983, 22[5], 836-41