The annealing of Zn-doped material was studies using photoluminescence methods. From these, it was deduced that the diffusivity of Zn in the c-axis direction could be described by:

D(cm2/s) = 2.7 x 107 exp[-2.5(eV)/kT]

It was deduced from the annealing behaviour that the dissociation energy of a Se vacancy and a Zn acceptor was 0.4eV.

S.Shigetomi, T.Ikari, Y.Koga, S.Shigetomi: Japanese Journal of Applied Physics, 1982, 21[5], L254-6