During annealing in an ampoule, Sn was diffused from Pb1-xSnxTe to PbTe. From electron-beam analysis of the diffusion profiles, the diffusivities in the 2 materials were found to be described by:

D(cm2/s) = 1.5 x 10-1exp[-1.8(eV)/kT]

for x-values ranging from 0.14 to 0.18, and by:

D(cm2/s) = 5.5 x 10-4exp[-1.5(eV)/kT]

for x = 0.