The possibility of radiation-enhanced B diffusion was investigated by using 85nA/cm2 2.5MeV proton bombardment at high temperatures. No radiation-enhanced diffusion was detected, and the migration/trapping part of the activation energy for B diffusion was estimated to be greater than 3.5eV.

Boron Diffusion in Si and SiC during 2.5MeV Proton Irradiation at 500-850C. A.Y.Kuznetsov, M.Janson, A.Hallén, B.G.Svensson, A.N.Larsen: Nuclear Instruments and Methods in Physics Research B, 1999, 148[1-4], 279-83