The diffusion of implanted Be was investigated by using secondary ion mass spectrometry. The shape of the as-implanted profile changed appreciably, upon annealing at above 1300C, due to redistribution. Strong out-diffusion into the annealing ambient, and in diffusion into the bulk material, was observed. The Be diffused faster in epitaxial layers than in bulk crystals which were grown by sublimation. Effective diffusion, with an activation energy of 3.1eV, was determined for bulk crystals at 1500 to 1700C (figure 27). The Be was suggested to diffuse via interstitial sites.

Diffusion of Implanted Beryllium in Silicon Carbide Studied by Secondary Ion Mass Spectrometry. T.Henkel, Y.Tanaka, N.Kobayashi, H.Tanoue, S.Hishita: Applied Physics Letters, 2001, 78[2], 231-3