The self-diffusion of 14C in chemical vapour-deposited β-SiC was studied at 2128 to 2374K. Suzuoka analysis led to the relationships:

bulk:     D (cm2/s) = 2.62 x 108 exp[-8.72(eV)/kT]

boundaries:     D (cm2/s) = 4.44 x 107 exp[-5.84(eV)/kT]

It was suggested that bulk diffusion occurred via a vacancy mechanism which involved an initial jump to a vacant tetrahedral site, followed by a jump to a normally occupied C vacancy.

M.H.Hon, R.F.Davis: Journal of Materials Science, 1979, 14[10], 2411-21