The tracer diffusion coefficients of 67Cu and 64Cu in chemical vapour deposited β-SiC were measured between 623 and 1373K (table 44) by using a serial ion-beam sputter-microsectioning technique. The temperature dependence of the diffusion coefficient was described by:

D (m2/s) = 8.2 x 10-16 exp[-41(kJ/mol)/RT]

The diffusion coefficient of Cu in β-SiC was larger than those of Si and C by more than 6 orders of magnitude and those of Fe and Cr by 1 to 3 orders of magnitude. The activation energy for the diffusion of Cu was about one twentieth of that for self-diffusion. The results suggested that an interstitial mechanism operated during the diffusion of Cu in β-SiC.

Tracer Diffusion of Cu in CVD β-SiC. A.Suino, Y.Yamazaki, H.Nitta, K.Miura, H.Seto, R.Kanno, Y.Iijima, H.Sato, S.Takeda, E.Toya, T.Ohtsuki: Journal of Physics and Chemistry of Solids, 2008, 69[2-3], 311-4

Table 44

Diffusion of Cu in SiC