Small-angle X-ray scattering and D secondary ion mass spectrometric studies of the microstructure and H dynamics in undoped radio-frequency sputter-deposited, and in undoped and B-doped electron-cyclotron resonance-deposited hydrogenated amorphous samples were described. In radio-frequency sputter-deposited Si1-xCx, with x less than 3at%, the D secondary ion mass spectrometry data yielded a power-law time-dependent H diffusion constant, where the dispersion parameter varied from 0 to about 0.5; from sample to sample. It was temperature-independent at 350 to 475C. The moderate values of the dispersion parameter were consistent with moderate initial nanovoid contents. The values of the activation energy among the various films, for a diffusion length of 100nm, were about 1.7, 1.4 and 0.65eV. The first 2 values were similar to those found in amorphous hydrogenated Si, but the reason for the anomalously low value of 0.65eV was unclear. In undoped electron-cyclotron resonance-deposited samples with 14at%C, the time-dependence exhibited a similar power-law behaviour, but with a dispersion parameter which decreased from 0.3 at 350 and 400C, to 0.1 at 450C. In spite of the high C-content, the behavior of the dispersion parameter was similar to that in amorphous hydrogenated Si at lower temperatures. However, the activation energy was anomalously low (1.0eV).

Microstructure and Hydrogen Dynamics in Hydrogenated Amorphous Silicon Carbides. J.Shinar, R.Shinar, D.L.Williamson, S.Mitra, H.Kavak, V.L.Dalal: Physical Review B, 1999, 60[23], 15875-89