The diffusivity of 30Si in high-purity α-type single crystals was determined. The data for temperatures of between 2273 and 2563K could be described by:

D (cm2/s) = 5.01 x 102 exp[-7.22(eV)/kT]

in the case of undoped samples. When the material was doped with N, the data could be described by:

D (cm2/s) = 1.54 x 105 exp[-8.18(eV)/kT]

J.D.Hong, R.F.Davis, D.E.Newbury: Journal of Materials Science, 1981, 16[9], 2485-94