The diffusion was studied by applying 12C and 4He ion back-scattering techniques to thin films which had been grown, via molecular-beam epitaxy, onto bulk or epitaxial GaAs (100) substrates; followed by Au evaporation and annealing at 400 to 800C. The diffusivity of Au was found to depend appreciably upon the specimen type (table 45).

Diffusion of Au in ZnSe and its Dependence upon Crystal Quality. J.Slotte, R.Salonen, T.Ahlgren, E.Rauhala, J.Keinonen, J.Räisänen, P.Uusimaa, A.Salokatve, M.Pessa, A.Laakso: Journal of Applied Physics, 1999, 85[2], 799-802

 

Table 45

Diffusion Parameters for Au in ZnSe

 

Specimen

Do (nm2/s)

E (eV)

bulk GaAs substrate, 70nm Au

2.3 x 1010

1.5

epitaxial GaAs substrate, 100nm Au

4.8 x 109

1.6

epitaxial GaAs substrate, 10nm Au

5.7 x 108

1.8