The diffusivity of Cd in single quantum-well structures which had been grown pseudomorphically onto (001) GaAs was determined by means of the high-resolution transmission electron microscopy of annealed single quantum wells, after digital analysis of the lattice images. Single quantum wells which were 2 monolayers in thickness were grown by molecular beam epitaxy. During growth, the CdSe quantum wells broadened to about 7 monolayers of CdZnSe, as measured by reflection high-energy electron diffraction. It was found that the diffusivity of Cd in ZnSe, at temperatures of between 340 and 400C, could be described by:

D(m2/s) = 0.00019 exp[-1.8(eV)/kT]

A.Rosenauer, T.Reisinger, E.Steinkirchner, J.Zweck, W.Gebhardt: Journal of Crystal Growth, 1995, 152[1-2], 42-50