The migration of Pt was studied by applying 4He and 12C ion back-scattering techniques to thin films which had been grown, by means of molecular beam epitaxy, onto GaAs(100) epitaxial layers. The deposition was followed by the evaporation of Pt, and annealing at temperatures ranging from 500 to 800C. The diffusion coefficients were determined by fitting a concentration-independent solution of the diffusion equation to the experimental depth profiles. The data (figure 31) could be described by:

D (cm2/s) = 6.4 x 10-6 exp[-1.7(eV)kT]

J.Slotte, R.Salonen, T.Ahlgren, J.Räisänen, E.Rauhala, P.Uusimaa: Applied Physics Letters, 1998, 72[20], 2553-5