The self-diffusion of Zn in single crystals doped with various amounts of Al or As was studied at 800, 900 and 1000C. The results were described by:

Al-doped:     D (cm2/s) = 8.4 x 10-4 exp[-1.70(eV)kT]

As-doped:     D (cm2/s) = 5.0 x 10-5 exp[-1.65(eV)kT]

A.K.Ray, F.A.Kröger: Journal of the Electrochemical Society, 1978, 125[8], 1348-55