Structural characterization of Bi2Te3 and Sb2Te3 single crystals grown using the zone-melting method was carried out using X-ray diffraction and chemical etching. The top free surface of as-grown Bi2Te3 and Sb2Te3 single crystal were observed under optical microscope. The particle size was calculated for a number of reflections using Scherrer’s formula by X-ray diffraction method. By the use of X-ray diffraction data, the growth and deformation fault probability was estimated for the grown single crystals. The presence of stacking fault in the lattice structure of the grown crystals was verified by the probability of growth and dislocation fault. Also new dislocation etchant was developed by the successive trial–error method. Dislocation etching was achieved on (111) crystal plane examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant was found to give reproducible etch pits on the cleavage surface for an appropriate etching time 30s. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting.

Stacking Fault in Bi2Te3 and Sb2Te3 Single Crystals. B.Jariwala, D.V.Shah: Journal of Crystal Growth, 2011, 318[1], 1179-83