A simple spectroscopic method was proposed for the characterization of metastable defects in semiconductors using modified photo-isothermal capacitance transient spectroscopy (photo-ICTS). A photo-ICTS method using a weighting function was formularized for the conversion process between two defect states. The potential energy barrier separating two configurations of the metastable defect in Cu(In,Ga)Se2 thin films was successfully analyzed along with a tentatively determined defect concentration.

Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se2 Thin Films with Photoisothermal Capacitance Transient Spectroscopy. H.Okada, T.Minemoto: Japanese Journal of Applied Physics, 2011, 50[2], 020203