To gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples were irradiated in situ with 400keV Xe ions. At room temperature, dislocation loops were observed to form, and grew with increasing fluence. These loops were investigated using g b techniques and inside/outside contrast analysis. They were found to reside on {112} planes and to be interstitial in nature. The Burgers vector were calculated as b = 1/6 〈221〉. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these were also presented, along with analysis of the [100] zone-axis pattern.

Copper Indium Diselenide: Crystallography and Radiation-Induced Dislocation Loops. J.A.Hinks, S.E.Donnelly: Philosophical Magazine, 2011, 91[4], 517-36