Crystal growth of GaAs layers and InAs quantum dots on GaAs layers was investigated on Ge/Si substrates using ultra-high vacuum chemical vapour deposition. The Ga-rich GaAs with antisite Ga atoms grown, at a low V/III ratio, was found to suppress the diffusion of Ge into GaAs. S–K mode quantum dot formation was observed on GaAs layers grown on Ge/Si substrates with Ga-rich GaAs initial layers, and improved photoluminescence from 1.3μm-emitting InAs quantum dots was demonstrated.

Formation of Ge-Diffusion-Suppressed GaAs Layers and InAs Quantum Dots on Ge/Si Substrates. K.Kawaguchi, H.Ebe, M.Ekawa, A.Sugama, Y.Arakawa: Journal of Crystal Growth, 2010, 312[20], 2919-22