The simulation of coupled diffusion of silicon atoms and point defects in GaAs was carried out for diffusion at the temperatures of 1000 and 850C. The amphoteric behavior of silicon atoms in GaAs was taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirmed the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs.

Simulation of Silicon Diffusion in GaAs. A.M.Saad, O.I.Velichko: Physica B, 2011, 406[5], 1065-9