The optical properties of GaAs nano-wires grown on shallow-trench-patterned Si(001) substrates were investigated by cathodoluminescence. The results showed that when the trench width ranged from 80 to 100nm, the emission efficiency of GaAs could be enhanced and was stronger than that of a homogeneously grown epilayer. The suppression of non-radiative centers was attributed to the trapping of both threading dislocations and planar defects at the trench side-walls. This approach demonstrated the feasibility of growing nano-scaled GaAs-based optoelectronic devices on Si substrates.

Cathodoluminescence Studies of GaAs Nano-Wires Grown on Shallow-Trench-Patterned Si. L.Lee, W.C.Fan, J.T.Ku, W.H.Chang, W.K.Chen, W.C.Chou, C.H.Ko, C.H.Wu, Y.R.Lin, C.H.Wann, C.W.Hsu, Y.F.Chen, Y.K.Su: Nanotechnology, 2010, 21[46], 465701